实验证明,温度下降,受激发射阈值电流下降,进入一个饱和区。这与Hwang在300—10K间的观察结果一致。但尔后又继续上升。我们认为这起因于载流子的泄漏。当温度在6—2.8K间阈值电流、结电压、动态电阻呈现规律性的结构。如果假设发生了电子-空穴凝聚,可用朗道相图作定性说明,但也可能起因于杂质能带。 Experiments show that the temperature dropped, stimulated emission threshold current decreased into a saturated zone. This is consistent with Hwang's observation at 300-10K. But then continued to rise. We think this is due to carrier leakage. When the temperature between 6-2.8K threshold current, junction voltage, dynamic resistance showed a regular structure. If we assume that the electron-hole coalescence can be qualitatively described by Landau's phase diagram, it may also be due to the impurity energy band.