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最近,InP-InGaAsPLEDs和激光器被用作光通信系统的光源。这些器件工作在1.1～1.5μm光谱区,在这一光谱区内,SiO_2传输光纤显示出低损耗和低色散特性。激光器和LED_s的可靠性试验突出其较长的器件寿命。像GaAs-GaAlAs材料系一样,发现了两种退化模型,即在光发射区内形成暗线缺陷(DLD_s)和暗点缺陷(DsD_s)。对InP-InGaAsP激光器的分析表明,<110>相<100>向的DLD_s生长是位错的攀援和滑移运动所致。而DSD_s则是由长度为
Recently, InP-InGaAs PLEDs and lasers have been used as light sources for optical communication systems. These devices operate in the 1.1-1.5 μm spectral region, where the SiO 2 transmitting fiber exhibits low loss and low dispersion. Laser and LED_s reliability tests highlight the longer device lifetimes. Like the GaAs-GaAlAs material series, two degenerate models were discovered, namely dark line defects (DLDs) and dark spot defects (DsD_s) formed in the light emitting region. Analysis of InP-InGaAsP lasers shows that <110> phase <100> directional DLD_s growth is caused by dislocation climbing and slipping motions. The DSD_s is by the length of