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我们论述了一种适用于CVD二氧化硅的新的低压和低温工艺,这种新的工艺与常规低压CVD工艺不同。采用这种新工艺时低温(150～300℃)和独特压力范围(2～10乇)提供适合于硅烷和氧进行反应的条件。在这种热处理过程中,活化能为0.15～0.18电子伏,在250℃时的淀积速率达到100埃/分钟。和常压CVD工艺相比,这种技术对O_2/SiH_4比率的灵敏度大约只有十五分之一。淀积条件与低温硅及Ⅲ-Ⅴ族工艺兼容。对于硅的初始电流-电压和电容-电压测量结果表明,电介质电场强度为3～8×10~6伏/厘米,固定氧化物电荷密度Q_(ss)<10~(11)/厘米~2。
We discuss a new low-pressure and low-temperature process for CVD silica that is different from conventional low-pressure CVD processes. The low temperature (150-300 ° C) and the unique pressure range (2-10 Torr) with this new process provide conditions suitable for the reaction of silane and oxygen. In this heat treatment, the activation energy is 0.15 to 0.18 electron volts, and the deposition rate reaches 100 Å / min. At 250 ° C. The sensitivity of this technique to the O 2 / SiH 4 ratio is only about one-fifteenth compared to the atmospheric CVD process. The deposition conditions are compatible with low temperature silicon and III-V processes. The initial current-voltage and capacitance-voltage measurements of silicon showed that the electric field strength of the dielectric was 3 ~ 8 × 10 ~ 6 V / cm and the charge density of the fixed oxide was Q_ (ss) <10 ~ (11) / cm ~ 2.