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本文用ANSYS有限元热分析软件模拟了基于AlN膜钝化层和Si O2膜钝化层的高功率垂直腔面发射半导体激光器(VCSEL)器件内部的热场分布和热矢量分布.目的是证明Al N膜钝化层要比SiO2膜钝化层有具更好的特性,使器件能更稳定的工作,提高器件的特性,经模拟得到基于Al N膜钝化层的VCSEL热阻为3.12℃/W,而基于SiO2膜钝化层的VCSEL的热阻为4.77℃/W.经实验测得基于Al N膜钝化层的VCSEL热阻为3.59℃/W而基于SiO2膜钝化层的VCSEL的热阻为4.82℃/W,模拟结果和实验结果吻合较好.说明AlN膜钝化层要比SiO2膜钝化层具有更好的热特性.
In this paper, the thermal field distribution and thermal vector distribution in high power vertical cavity surface emitting semiconductor laser (VCSEL) devices based on AlN passivation layer and Si O2 passivation layer were simulated by ANSYS finite element analysis software.The purpose is to prove that Al N passivation layer than the SiO2 passivation layer has better properties, the device can be more stable work to improve the device characteristics, the simulation results obtained based on Al N passivation layer VCSEL thermal resistance of 3.12 ℃ / W and the thermal resistance of the VCSEL based on the SiO2 film passivation layer was 4.77 ° C. The thermal resistance of the VCSEL based on the Al N passivation layer was experimentally measured to be 3.59 ° C./W and the thermal resistance of the VCSEL based on the SiO2 film passivation layer The thermal resistance is 4.82 ℃ / W, and the simulation results are in good agreement with the experimental results, which shows that the AlN passivation layer has better thermal characteristics than the SiO2 passivation layer.