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利用超高真空扫描隧道显微镜研究了室温条件下Ge在Si( 111) 7× 7表面上初期吸附过程 .在Ge所形成团簇中存在一个临界核 .这些Ge团簇的吸附中心总是在三个增原子所围成的区域中 .它们的电子结构具有类似半导体的性质 ,即其局域态密度在远离费米面的能级处很大 ,而在费米面附近的能级处非常小 .
The initial adsorption of Ge on Si (111) 7 × 7 surface at room temperature was investigated by using ultra-high vacuum scanning tunneling microscope. There exists a critical nucleus in the clusters formed by Ge. The adsorption centers of these Ge clusters are always at three In the area surrounded by atoms, their electronic structure has the semiconducting properties that their local state density is very high at the energy level far from the Fermi surface and very small at the energy level near the Fermi surface.