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研究了金、钨等多种材料与硅交界时６０Ｃｏγ射线在界面硅一侧产生的深度剂量分布。将该分布与均匀硅材料中的平衡剂量比较，发现在界面附近具有明显的剂量梯度分布。特别在金等高原子序数材料与硅交界的情况下，硅界面的剂量有显著增强现象。以康普顿散射、光电、俄歇效应和次级电子的输运机制为基础，用半径验电子输运方程对界面附近的剂量梯度分布进行了计算，得到了与实验符合较好的结果。
The depth dose distribution of 60Coγ-ray generated on the silicon side of the interface at the interface of various materials such as gold and tungsten with silicon was studied. Comparing this distribution to the equilibrium dose in a homogeneous silicon material, it was found that there was a significant dose gradient profile near the interface. Especially in the case of gold and other high atomic number materials and silicon at the junction of the silicon interface, the dose has significantly enhanced phenomenon. On the basis of Compton scattering, photoelectricity, Auger effect and transport mechanism of secondary electrons, the distribution of dose gradient in the vicinity of the interface was calculated by the radius-dependent electron transport equation, and the good agreement with the experimental results was obtained.