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我们已经研究出由SiH_4和TiCl_4混合气体淀积硅化钛薄膜的CO_2激光诱发化学气相淀积(CVD)工艺。这种薄膜目前适合于制作栅电极、互连线和接触点,并且可望用于超大规模集成电路的制造中。在衬底温度为400℃时,淀积的薄膜是非晶态的,其电阻率为300μΩcm.在800℃退火后,该薄膜转变为多晶TiSi_2,其电阻率为20μΩcm.淀积薄膜组分可以随着SiH_4/TiSl_4气体流量比而改变.在CVD反应室中,CO_2激光引起热化学气相反应.观察到了由热力学所预言的气相反应产物.
We have developed a CO 2 laser-induced chemical vapor deposition (CVD) process for depositing a titanium silicide film from a mixed gas of SiH 4 and TiCl 4. Such films are currently suitable for making gate electrodes, interconnects and contacts, and are expected to be used in the manufacture of very large scale integrated circuits. The deposited film was amorphous with a resistivity of 300 μΩcm at a substrate temperature of 400 ° C. The film was converted to polycrystalline TiSi_2 with a resistivity of 20 μΩcm after annealing at 800 ° C. The deposited film component Varies with the gas flow ratio of SiH 4 / TiSl 4 In the CVD chamber, the CO 2 laser causes a thermochemical vapor phase reaction, and the gas phase reaction product predicted by thermodynamics is observed.