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利用多功能离子束增强沉积设备，采用三种不同工艺方法制备TiN薄膜，并对制备的TiN薄膜进行了AES，XPS，XRD，RBS和TEM等分析。结果表明：所制备的薄膜都有很好均匀性，TiN薄膜处在压应力状态；在溅射沉积的同时，在0～20keV范围内，N+和Ar+离子的轰击使得TiN薄膜的生长呈现不同择优取向；随着N+离子轰击能量的增加，制备的TiN薄膜的晶粒增大。
TiN thin films were prepared by three different techniques using multifunctional ion beam enhanced deposition equipment. The TiN films were analyzed by AES, XPS, XRD, RBS and TEM. The results show that the prepared films have good uniformity and the TiN films are under compressive stress. At the same time of sputtering deposition, the growth of TiN films presents different preponderances with bombardment of N + and Ar + ions in the range of 0 ~ 20keV Orientation; With the N + ion bombardment energy increases, the TiN film prepared grain increases.