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利用常压MOCVD技术在较低生长速率下生长出多种GaAs/AlGaAs多量子阱结构材料,利用低温PL谱和TEM对材料结构进行了表征。所得势阱和势垒结构厚度均匀平整,最窄阱宽为1.8nm。本研究表明,低速率(γ≤0.5nm/s)连续生长工艺能够避免杂质在界面富集,优于间断生长工艺,且在掺si n~+-GaAs衬底上所得量子阱发光强度高于掺Cr SI-GaAs衬底上的结果。
A variety of GaAs / AlGaAs MQW structures were grown at lower growth rate by atmospheric MOCVD. The structure of the GaAs / AlGaAs MQWs was characterized by low temperature PL spectrum and TEM. The resulting potential well and barrier structure thickness uniform formation, the narrowest well width of 1.8nm. The results show that the low rate (γ≤0.5 nm / s) continuous growth process can avoid the impurity enrichment at the interface, which is better than the interruptive growth process. The luminescence intensities of quantum wells on the doped Si n ~ + -GaAs substrate are higher than Results on Cr SI-GaAs Substrates.