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深入研究了MOS结构中薄栅氧化层在高电场下的退火效应 ,对氧化层陷阱电荷的退陷阱机理进行了深入探讨 .通过实验和模拟对氧化层陷阱电荷的退陷阱机理和生长机理进行了比较 ,给出了满意的物理解释 .负栅压退火和正栅压退火的比较表明负栅压退火更为有效
The annealing effect of the thin gate oxide in the MOS structure under high electric field is deeply studied and the trap mechanism of the oxide trap charge is deeply discussed.The trap trap mechanism and the growth mechanism of the oxide trap charge are experimentally and experimentally simulated A satisfactory physical explanation is given, and a comparison of negative gate annealing and positive gate annealing shows that negative gate annealing is more effective