一般制备平面型探测器的工艺是一面扩散锂制n~+,另一面蒸钯作p~+接触,国外有报道用离子注入结作p~+接触。我们在p~+接触方面用离子注入硼、蒸钯和蒸金等方法作了实验,并对比了用这些方法制探测器后得到的结果。 一、制备 探测器使用的原材料是比利时Hoboken公司和美国LBL实验室制造的高纯锗单晶,其技术指标为:净杂质浓度小于3×10~(10)cm~(13),77K时迁移率大于4×10~4cm~2/(V·s)位错密度小于5×10~3cm~(-3),并且均布。 General preparation of planar detector technology is the proliferation of lithium n ~ +, the other side of the palladium for p ~ + contact, foreign reports have been used for ion implantation junction p ~ + contact. We used the methods of ion implantation of boron, steamed palladium and steamed gold in the p ~ + contact experiments, and compared the results obtained with these methods. First, the detector used in the preparation of raw materials is Hoboken, Belgium and the United States LBL laboratory to produce high purity germanium single crystal, the technical indicators: the net impurity concentration of less than 3 × 10 ~ (10) cm ~ (13), 77K migration The dislocation density of more than 4 × 10 ~ 4cm ~ 2 / (V · s) is less than 5 × 10 ~ 3cm ~ (-3), and uniform.