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用一种简练的异质结双极晶体管（ＨＢＴ）模型来模拟ＳｉＣ基双极晶体管的高频和大功率特性。研究了一种外壳温度在２７℃（３００Ｋ）到６００℃（８７３Ｋ）下的６Ｈ－ＳｉＣ／３Ｃ－ＳｉＣＨＢＴ。将其高频大功率特性与ＡｌＧａＡｓ／ＧａＡｓＨＢＴ作了比较。不出所料，欧姆接触电阻限制了ＳｉＣＨＢＴ的高频性能。现在看来，在ＳｉＣ上只能可靠地产生１×１０￣（－４）Ω－ｃｍ￣２的接触电阻。所以ｆ＿Ｔ和ｆ＿（ｍａｘ）的最高实际值仅分别为４．４ＧＨｚ和３．２ＧＨｚ。但假定发射极、基极和集电极的接触电阻低到１×１０￣（－６）Ω时，则６Ｈ／３ＣＳｉＣＨＢＴ的ｆ＿Ｔ和ｆ＿（ｍａｘ）分别可达到３１．１ＧＨｚ和１２．７６Ｈｚ。
A concise heterojunction bipolar transistor (HBT) model is used to simulate the high frequency and high power characteristics of SiC-based bipolar transistors. A 6H-SiC / 3C-SiCHBT with shell temperature of 27 ℃ (300K) to 600 ℃ (873K) was studied. The high-frequency high-power characteristics and AlGaAs / GaAsHBT were compared. As expected, ohmic contact resistance limits the high frequency performance of SiCHBT. It now appears that a contact resistance of 1 x 10 ~ (-4) Ω-cm ~ 2 can only be reliably produced on SiC. Therefore, the maximum actual values of f_T and f_max are only 4.4 GHz and 3.2 GHz, respectively. However, assuming that the emitter, base and collector contact resistance is as low as 1 × 10 -6 Ω, the f_T and f max of the 6H / 3CSiCHBT reach 31.1 GHz and 12.76 Hz, respectively.