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本文介绍用2.0兆电子伏的He~+离子反向散射测量技术来测定能量为150～300千电子伏的锌、镓、砷、硒、镉、碲离子注入到SiO_2、Si_3N_4和Al_2O_3中的射程分布。测得的投影射程均比LSS理论计算值大至1.2—1.5倍。用归-化的LSS单位,在实验误差之内,投影射程ρ_p和能量ε之间的关系可以写为ρ_p=2.7ε。这个关系式对于算术平均原子序数为10和算术平均原子质量为20的离子都适用于上述三种靶。
In this paper, the measurement of the backscattering energy of He ~ + ions at 2.0 MeV was used to determine the ranges of Zn, Ga, As, Se, Cd and Te ions implanted into SiO_2, Si_3N_4 and Al_2O_3 with energy of 150 ~ 300 keV distributed. The measured projection range is 1.2-1.5 times larger than the calculated value of LSS theory. With normalized LSS units, the relationship between the projective range ρ_p and the energy ε can be written as ρ_p = 2.7ε within the experimental error. This relation applies to the above three targets for ions having an arithmetic average atomic number of 10 and an arithmetic average atomic weight of 20.