美佛罗里达大学的科学家声称已研制出以氢化镓（GaNi）为材料的金属氧化物场效应晶体管，用这种新一代电力电子元件代替传统的开关元件。GaNi元件的巨大潜力在于其可在高电压下运行，并耐高温.目前电力公司采用的继电元件或硅电力半导体都存在着严重的缺陷，如继电元件在进行开 Scientists at the University of Florida say it has developed metal oxide field-effect transistors based on gallium nitride (GaN), replacing the traditional switching elements with this new generation of power electronics. The great potential of GaNi devices lies in their high voltage operation and high temperature resistance.Now the power companies using relay components or silicon power semiconductor there are serious shortcomings, such as relay components in the open