论文部分内容阅读
利用 SOI材料的埋层二氧化硅的自停止特性 ,成功制作了具有高反射底镜的共振腔增强型 Si Ge探测器 .底镜沉积于 EPW腐蚀液腐蚀形成的背孔内 ,在 1.2～ 1.5 μm范围内 ,反射率高达 99% .探测器的共振峰在 1.344 μm,光响应为 1.2 m A/ W.与普通结构的探测器相比 ,文中所报道的探测器光响应有 8倍的增强 .
The self-stopping characteristics of buried silicon dioxide of SOI material were successfully fabricated with enhanced cavity SiGe detector with high reflection bottom mirror.The bottom mirror was deposited in the back hole formed by corrosion of EPW etchant, μm, the reflectivity is as high as 99%. The detector has a formant at 1.344 μm and a photoresponse of 1.2 m A / W. The photodetector response reported here is eight times more intense than the conventional detector .