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前言多年来,扩展电阻技术在半导体生产与科研中,已成为常规测量工具。它有高的空间分辨率(10~(-10)cm~2),能测试微区电阻率分布和多层结构的纵向电阻率分布。可测电阻率范围广,测量速度快而准确性高,是硅材料及器件工艺中重要的在线检测仪。一测量原理扩展电阻测量,是用一金属探针与半导体样品镜面形成欧姆型点接触,其接触半径一般小于5微米,在低压(几毫伏～几十毫伏)和轻负荷(几克～几十克)的条件下进行测量。其理论公式可表达为:
Preface Over the years, the expansion of resistance technology in semiconductor production and research, has become a routine measurement tool. It has high spatial resolution (10 ~ (-10) cm ~ 2) and can test the distribution of resistivity in the micro-zone and the longitudinal resistivity of the multilayer structure. Measurable range of resistivity, fast measurement speed and high accuracy, silicon material and device technology is an important online detector. A measurement principle Extended resistance measurement is the use of a metal probe and the semiconductor sample mirror forming ohmic contact point, the contact radius is generally less than 5 microns at low pressure (a few millivolts ~ tens of millivolts) and light load (a few grams ~ Tens of grams) under the conditions of measurement. The theoretical formula can be expressed as: