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单晶硅几乎是每种近代半导体电子器件的心脏部分。制造这种器件需要经过一系列复杂的工艺步骤,其中包括引进少量杂质以调整所要求的电学特性。目前,这种工艺的中心环节之一涉及在炉子里加热到1000℃,时间达30分钟左右。然而,最近几年发展了一种全新的热处理工艺技术。与传统的工艺相比,这种方法是用短脉冲强激光辐射只加热器件的表面层,而不是加热整个硅片。这种新颖的工艺为生产新型层状器件结构开辟了广阔的前景。另外,
Monocrystalline silicon is almost the heart of every modern semiconductor electronic device. This device is manufactured through a series of complex process steps, including the introduction of a small amount of impurities to adjust the required electrical characteristics. At present, one of the central aspects of this process involves heating in a furnace to 1000 ° C for a period of about 30 minutes. However, a whole new heat treatment process technology has been developed in recent years. Compared with the traditional process, this method is to use short-pulse intense laser radiation to heat the surface layer of the device, rather than heating the entire wafer. This novel process opens up a vast prospect for producing new layered device structures. In addition,