In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs),we report a feasible method of low density drain (LDD) HEMT.Th
GaN-based semiconductors are very attractive for fabricating highly sensitive ultraviolet (UV) photodetectors (PDs) owing to their wide direct bandgap,excellent
We report on the photoluminescent characteristics of InGaN/GaN multiple quantum well (MQW) nanorod arrays with high inteal quantum efficiency.The InGaN/GaN MQWs
Graphene has attracted great experimental and theoretical interest since its successful fabrication.[1,2]The unique electronic structure of graphene,characteriz
We realize a wide spaced frequency comb by using an exteal low-fineness Fabry-Pérot (F-P) cavity to filter fewcycle laser pulses from a Kerr-lens mode-locked T