论文部分内容阅读
基于压阻效应,利用微电子机械系统(MEMS)技术,研制了一种可用于多领域的高g值加速度传感器。加速度传感器采用四端全固支八梁结构,利用力学计算、ANSYS仿真和工艺约束相结合的方法确定了结构参数。通过对压敏电阻的数量、结构和布放位置的分析与设计,进一步减小了加速度传感器的横向灵敏度。采用硅-硅键合与共晶键合相结合工艺制作了圆片级气密封装的加速度传感器芯片,并用塑封工艺实现了加速度传感器芯片的封装,易于批量生产和工业应用。最后,对加速度传感器的性能进行了测试,结果表明灵敏度为1.5~2μV/g,一阶固有频率大于200 kHz,在1.5×10~5 g量程内正常并有效工作,抗过载大于2.5×10~5 g。
Based on the piezoresistive effect, a high g-value acceleration sensor that can be used in many fields is developed by using microelectromechanical system (MEMS) technology. The accelerometer adopts four-end fully-supported eight-beam structure, and the structural parameters are determined by means of mechanical calculation, ANSYS simulation and process constraint. Through the number of varistor, structure and location of the analysis and design to further reduce the lateral sensitivity of the acceleration sensor. The accelerometer sensor chip made of airtightly sealed wafer was fabricated by the combination of silicon-silicon bonding and eutectic bonding, and the encapsulation of accelerometer sensor chip was realized by plastic encapsulation process, which is easy to mass-produce and industrial application. Finally, the performance of the accelerometer was tested. The results show that the sensitivity is 1.5 ~ 2μV / g, the first natural frequency is greater than 200 kHz, normal and effective in the range of 1.5 × 10 ~ 5 g, the overload is more than 2.5 × 10 ~ 5 g.