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根据分布布拉格反射镜(DBR)的工作原理,优化量子阱(QW)和DBR结构,采用Crosslight计算机模拟软件模拟了垂直腔面发射半导体激光器(VCSEL)的反射谱和QW增益谱,确定QW组分、厚度以及DBR的对数。采用分子束外延技术外延生长并制备了850nm顶发射VCSEL。测试结果表明,阱宽为5nm的In_(0.075)Ga_(0.925)As/Al_(0.35)Ga_(0.65)As QW,在室温下激射波长在840nm左右,设计的顶发射VCSEL结构通过Ocean Optics Spectra Suite软件验证,得到室温下的光谱中心波长在850nm附近,证实了结构设计的正确性。
According to the working principle of distributed Bragg reflector (DBR), the structure of quantum well (QW) and DBR is optimized, the reflection spectrum and QW gain spectrum of vertical cavity surface emitting semiconductor laser (VCSEL) are simulated by Crosslight computer simulation software, , Thickness and DBR logarithm. Epitaxial growth and preparation of 850nm top emission VCSEL by molecular beam epitaxy. The results show that the peak emission VCSEL structure of In_ (0.075) Ga 0.925 As / Al 0.35 Ga 0.65 As QW with a well width of 5 nm is designed by Ocean Optics Spectra Suite software validation, obtained at room temperature spectral center wavelength around 850nm, confirming the correctness of the structural design.