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日本三菱电机公司研制出即使在室温下也能以过去1/5的小电流振荡的半导体阵列激光器。该激光器,由铟、砷化镓形成多量子阱结构的激光发光区域,对于区域内的晶体横向加应力,使其形变,在制造工艺技术上采用了可使晶体均质生长的有机金属气相生长(MOCVD)法。据此,提高了激光振荡所需的电子比例,即使在1.5mA的小电流(室温
Mitsubishi Electric Corporation of Japan has developed semiconductor array lasers capable of oscillating at a small current of 1/5 of the past even at room temperature. The laser is made of indium and gallium arsenide to form a laser light emitting region with a multiple quantum well structure. The laser is made to deform laterally by stressing the crystal in the region. In the manufacturing technology, the organic metal is grown by vapor phase epitaxy (MOCVD) method. Accordingly, the electron ratio required for laser oscillation is increased even at a small current of 1.5 mA (room temperature