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镓杂质均可在裸Si系和SiO2/Si秒中扩散,但棵Si扩镓易在硅表面产生富镓合金点、凹坑和"白霜",导致器件低、软的击穿等,为了清除表面缺陷对器件性能的影响,采用SiO2/Si系扩镓进行了研究.经过实验和长期应用,这是克服表面影响的行之有效的方法.本文对二种扩散方式所产生的不同结果,进行了分析和讨论.
Gallium impurities can be diffused in bare Si and SiO2 / Si seconds. However, Si gallium diffusions tend to produce Ga-rich alloy dots, pits and “white frost” on the silicon surface, resulting in low device and soft breakdown. Clear the surface defects on the performance of the device, the use of SiO2 / Si series gallium were studied. After experiments and long-term application, this is an effective way to overcome the surface effects. This article analyzes and discusses the different results produced by the two kinds of diffusion methods.