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利用MOCVD方法在蓝宝石(0001)衬底上生长PIN型AlGaN/GaN外延材料,研制出背照式AlGaN基PIN日盲型紫外探测器,用紫外光谱测试系统和半导体参数测试仪分别测得了器件的光谱响应和I-V特性曲线。测试结果表明,器件的响应范围为260~280 nm,峰值响应出现在270 nm处,在2.5 V偏压下的最大响应度为0.055 A/W,对应的探测率为4.6×1011cm.Hz1/2.W-1;正向开启电压为1.6 V,反向击穿电压约为16 V,在-0.3 V偏压下的暗电流约为25 pA。
A PIN-type AlGaN / GaN epitaxial material was grown on a sapphire (0001) substrate by MOCVD method. A backlit AlGaN-based PIN solar-blind UV detector was developed. The UV-spectrum test system and the semiconductor parameter tester were used to measure the device’s Spectral response and IV characteristic curve. The test results show that the response range of the device is 260-280 nm and the peak response is at 270 nm. The maximum responsivity at 2.5 V bias is 0.055 A / W and the corresponding detection rate is 4.6 × 10 11 cm · Hz 1/2 .W-1; the forward turn-on voltage is 1.6 V, the reverse breakdown voltage is about 16 V, and the dark current is about 25 pA at -0.3 V bias.