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通过化学气相沉积(CVD)工艺成功生长出少层MoS_2薄膜,用Raman光谱仪对材料进行表征,验证了三层MoS_2材料的存在。基于CVD生长出的三层MoS_2薄膜材料完成了背栅场效应晶体管(FET)的制作工艺研发。对MoS_2FET器件进行了电学特性表征,研制的MoS_2FET器件的开关比可达到1.45×10~6,器件的电子载流子场效应迁移率约为1 cm~2·V~(-1)·s~(-1)。对等离子增强化学气相沉积(PECVD)氮化硅(SiN_x)工艺掺杂MoS_2材料进行了研究,掺杂后器件的驱动电流提高了3倍多,验证了SiN_x掺杂MoS_2材料的有效性。通过控制PECVD SiN_x时间工艺参数对SiN_x薄膜厚度与掺杂浓度的关系进行了研究,随着SiN_x薄膜厚度增加器件的驱动电流逐渐增强,验证了SiN_x掺杂MoS_2材料的可控性。最后,对PECVD SiN_x工艺掺杂MoS_2材料的机理进行了讨论。
A few layers of MoS_2 thin films were successfully grown by chemical vapor deposition (CVD), and the materials were characterized by Raman spectroscopy to verify the existence of three layers of MoS_2. Based on the growth of CVD three-layer MoS_2 film material to complete the back gate FET (FET) manufacturing process research and development. The electrical characteristics of MoS_2FET devices are characterized. The switching ratio of MoS_2FET devices can reach 1.45 × 10 ~ 6, and the mobility of electron carrier field effect is about 1 cm ~ 2 · V ~ (-1) s ~ (-1). The doping of MoS_2 by PECVD silicon nitride (SiN_x) process has been studied. The driving current of the device after doping increases by more than three times. The effectiveness of SiN_x doped MoS_2 is verified. The relationship between SiN_x film thickness and doping concentration was studied by controlling the PECVD SiN_x time process parameters. The controllability of SiN_x doped MoS_2 material was verified with the increase of SiN_x film thickness. Finally, the mechanism of MoS_2 doped with PECVD SiN_x was discussed.