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报道了N型高纯区熔硅单晶的高分辨率光热电离光谱(PTIS),观察到2个新的谱线系列。结果表明新的谱线系列可能与2个“类氢”复合型浅施主中心(NSD)有关,其浓度低达～10~9cm~(-3),电离能分别为36.61meV和36.97meV。另外,对P和NSD(1)都观察到以前未能分辨的与6p±以上杂质激发态有关的谱线,分析表明,NSD可能是晶体生长过程中产生的,氧可能在其中起重要作用。
The high resolution photothermal ionization spectroscopy (PTIS) of N-type high purity fused silica single crystal was reported and two new series of spectral lines were observed. The results show that the new spectral lines may be related to two “hydrogen-like” shallow shallow donor centers (NSDs) with concentrations as low as ~10 ~ 9cm -3 and ionization energies of 36.61meV and 36.97meV, respectively. In addition, previously unrecognized spectral lines associated with excited states above 6p ± were observed for both P and NSD (1). The analysis shows that NSD may be generated during crystal growth and oxygen may play an important role.