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日本东芝电气公司开发出了能大量生产砷化镓单晶的一种新方法—加强磁场的液体密封拉单晶法。它是在加3400高斯强磁场的状态下,拉制单晶。采用的熔化材料是精密陶瓷(氮化铝)。使用这一新方法控制的单晶纯度高、均匀性好、直径大(可这3英寸)。
Japan’s Toshiba Electric Company has developed a new method for mass-producing gallium arsenide single crystals - a liquid-sealed pull-single-crystal method that strengthens the magnetic field. It is in the state of 3400 Gaussian strong magnetic field, single crystal drawn. The melting material used is precision ceramic (aluminum nitride). Monocrystals controlled using this new method have high purity, good uniformity and large diameter (which can be 3 inches).