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我们报导了采用氯化物VPE首次成功地生长出选择掺杂In_(0.53)Ga_(0.47)As-InP异质结,并观察到二维电子气(TDEG)在4.2K时,其最大电子迁移率为106000cm~2V~(-1)s~(-1)。
We reported the first successful growth of the selective doping In 0.53 Ga 0.47 as-InP heterojunction using chloride VPE and the observation of the maximum electron mobility at 4.2 K for two-dimensional electron gas (TDEG) Is 106000cm ~ 2V ~ (-1) s ~ (-1).