报道了用STEM (扫描透射电子显微镜 )对GaInAsSb/GaSb异质结的截面不同部分进行分析和研究的初步结果。STEM图像表明 ,在四元合金GaInAsSb与衬底GaSb的晶格常数不相同时 ,将会由于晶格的不匹配而产生失配位错和层错 ,这些缺陷是对应力的一种释放形式 ,包括 6 0°位错、90°位错和堆垛层错 ,并且发现只有 90°位错才会在外延层表面产生脊。 The preliminary results of analyzing and studying different sections of the GaInAsSb / GaSb heterojunction using STEM (Scanning Transmission Electron Microscopy) are reported. STEM images show that when the lattice constants of quaternary alloy GaInAsSb and substrate GaSb are different, mismatch dislocations and stacking faults will be generated due to lattice mismatch. These defects are a kind of release form of stress, Including 60 ° dislocations, 90 ° dislocations and stacking faults, and found that only a 90 ° dislocation produced ridges on the surface of the epitaxial layer.