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在低压氧气氛中蒸发纯铟以制取In_2O_3薄膜获得成功。在此法中,有效蒸发面积等于坩埚的实际窗口面积,並且通过适当控制蒸发条件,可以获得二个有效的源区反应,即4In(l)+In_2O_3(s)→3In_2O(g)及2In(l)+(1/2)O_2(g)→In_2O(g)。因此薄膜生长速率可以比使用In_2O_3/In混合源时提高六倍,达219A/min。得到的膜特性为:当方块电阻等于10欧姆时,对白光的透光率不小于90％(不包括衬底吸收)。
Pure indium was evaporated in a low pressure oxygen atmosphere to make In 2 O 3 thin films. In this method, the effective evaporation area is equal to the actual window area of the crucible, and by proper control of the evaporation conditions, two effective source zone reactions can be obtained, namely 4In (1) + In_2O_3 (s) → 3In_2O (g) and 2In l) + (1/2) O 2 (g) → In 2 O (g). Therefore, the growth rate of the film can be increased by six times to 219 A / min than that of the In 2 O 3 / In mixed source. The resulting film properties are: Light transmittance to white light of not less than 90% (excluding substrate absorption) when the sheet resistance is equal to 10 ohms.