用Ｓｏｌ－Ｇｅｌ法自制了ＫＴＮ陶瓷，以之为靶材，首次在单晶硅上用ＰＬＤ技术沉积了ＫＴＮ薄膜，并对所制备的薄膜进行了ＸＲＤ和ＳＥＭ分析及Ｐ－Ｅ电滞回线观察．观察分析结果表明：薄膜的主晶相为钙钛矿相（约９８％），且沿（１００）方向取向生长；薄膜表面光滑、无裂纹、致密性好；薄膜具有良好的铁电性质．同时还分析了Ｓｉ（１００）单晶衬底上钙钛矿相的形成机理；并讨论了衬底温度Ｔｓ和氧气氛等因素对成膜的影响． KTN ceramics were prepared by Sol-Gel method. The KTN films were deposited on monocrystalline silicon by PLD for the first time. XRD and SEM analysis and P-E hysteresis loops Observed. The results of observation and analysis show that the main phase of the film is perovskite phase (about 98%) and grows along the direction of (100). The surface of the film is smooth, crack-free and compact. The film has good ferroelectric properties. At the same time, the formation mechanism of perovskite phase on Si (100) single crystal substrate was also analyzed. The effects of substrate temperature Ts and oxygen atmosphere on the film formation were also discussed.