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多孔硅的生成过程涉及从完美硅单晶逐渐变为不完整晶体,甚至无定形结构,其结构变化取决于制备条件和硅基底的掺杂类型与浓度。多数研究者利用不同的非原位手段研究多孔硅生成过程中晶态结构的变化,进一步研究其光致发光性能。本文对不同条件下生成的多孔硅的晶态结构进行了归纳总结,比较了透射电子显微镜、X射线衍射技术及拉曼光谱技术3种表征方法的特点及其对晶态结构认识的影响,指出不同微观表征手段的局限性使得众多的报道结果相差较大。最后本文就该领域的发展趋势和急需解决的问题进行了总结。
The process of forming porous silicon involves the gradual change from a perfect single crystal to an incomplete crystal or even an amorphous structure. The structure of the porous silicon depends on the preparation conditions and the doping type and concentration of the silicon substrate. Most researchers use different ex situ methods to study the crystal structure changes during the formation of porous silicon, and further study its photoluminescence properties. In this paper, the crystalline structures of porous silicon formed under different conditions were summarized. The characteristics of three kinds of characterization methods of transmission electron microscopy, X-ray diffraction and Raman spectroscopy and their effects on the understanding of the crystalline structure were compared. The limitations of different means of microscopic characterization make a large difference between the reported results. Finally, this article summarizes the development trend in this area and the problems that need to be solved urgently.