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利用同步辐射光电子能谱技术研究了低Sr组分时Pb_(1-x)Sr_xTe薄膜能带的移动规律,并计算了Pb_(1-x)Sr_xTe/Pb Te异质结中导带帯阶所占比率.当不考虑应力时,该异质结界面导带带阶比率Qc=ΔEC/ΔEg=0.71.当考虑应力时,PbTe能带发生L能谷与O能谷的劈裂,其导带带阶比率分别为QLC=0.47和QOC=0.72.Pb_(1-x)Sr_xTe/Pb Te异质结界面具有类型Ⅰ的能带排列结构,这说明Pb_(1-x)Sr_xTe/PbTe型量子阱或量子点对电子与空穴都有较强的限制能力.该异质结能带帯阶的精确测量有利于该类三元系半导体异质结在中红外光电器件的研发和应用中发挥重要作用.
Using the synchrotron radiation photoelectron spectroscopy technique to study the energy bandgap of Pb_ (1-x) Sr_xTe thin films when the content of Sr is low, and the conduction band 帯 order of Pb_ (1-x) Sr_xTe / PbTe heterojunction When the stress is not taken into account, the heterojunction interface conduction band order ratio Qc = ΔEC / ΔEg = 0.71. When considering the stress, the PbTe band occurs L energy valley and O energy valley cleavage, the conduction band The order ratios of the bands are QLC = 0.47 and QOC = 0.72, respectively. The Pb_ (1-x) Sr_xTe / PbTe-type heterojunction interface has type I band structure, Or quantum dots have a strong ability to limit both electrons and holes.The accurate measurement of the heterojunction band 帯 order is conducive to the ternary semiconductor heterojunction play an important role in the development and application of mid-infrared optoelectronic devices effect.