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采用光刻技术在覆盖有氧化锌(ZnO)薄膜的ITO玻璃片衬底上实现图形化生长,结合水热法在衬底上制备出结构完整、排列一致的ZnO矩形和圆环型单元阵列。在图形化的基础上二次生长ZnO纳米锥阵列,锥长度最大可达到10μm,远大于一次生长的长度,并且发现锥顶有很多精细的类似针状的纳米量级微细结构。分析了非图形化、图形化一次以及图形化二次生长的ZnO纳米锥阵列的场致发射性能。使用图形化二次生长的ZnO纳米锥阴极阵列制作了12.7cm(5inch)的场发射显示器(FED),能实现全屏发光。实验结果表明,图形化二次生长的ZnO纳米锥阵列发射电流密度为最大,可达0.6mA/cm2,其开启场强为2.5V/μm。图形化生长ZnO纳米锥的方法是一种能较好改善材料场发射性能的好方法,为寻求良好场发射性能材料的制备提供了一条有效的实验途径。
Photolithography was used to realize the pattern growth on the ITO glass substrate covered with zinc oxide (ZnO) thin film. The ZnO rectangular and ring-shaped cell arrays with complete structure and consistent arrangement were prepared on the substrate by hydrothermal method. On the basis of patterning, the ZnO nanometer cone arrays were grown twice. The length of the cone was up to 10μm, which was much larger than the length of one growth. And there were many fine, acicular-like nano-scale fine structures on the cone top. The field emission properties of ZnO nanometer cone arrays, which are non-patterned, patterned first and patterned, were analyzed. A 12.7 cm (5 inch) field emission display (FED) was fabricated using a graphically secondary grown ZnO nanocone cathode array to achieve full screen luminescence. The experimental results show that the emission current density of patterned nanoscaled ZnO nanowire arrays reaches the maximum at 0.6mA / cm2, and the turn-on field strength is 2.5V / μm. The method of graphically growing ZnO nano-cones is a good method for better improving the field emission performance of the material and provides an effective experimental approach for the preparation of materials with good field emission properties.