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分别采用Cl2/Ar和SiCl4/Ar作为刻蚀气体对InAs/GaSb二类超晶格红外探测材料进行ICP(Inductively Couple Plasma)刻蚀。结果表明,两种刻蚀气体的刻蚀深度与刻蚀时间都呈线性关系;在2 mTorr气压下,RF功率为50 W,SiCl4流量为3 sccm,Ar为9 sccm时,刻蚀速率为100 nm/min,且与材料的掺杂浓度无关。实验还表明,SiCl4/Ar作为刻蚀气体时,Ar流量在很大范围内对刻蚀速率没用明显影响,但Ar的流量越大,刻蚀的均匀性越好;用Cl2/Ar作为刻蚀气体时,刻蚀速率也是100 nm/min,但Ar流量对刻蚀速率有影响:当Ar流量小于3 sccm时,刻蚀速率随Ar流量的减小而明显降低。
ICP (Inductively Couple Plasma) etching of InAs / GaSb second-class superlattice infrared detection materials were respectively performed using Cl2 / Ar and SiCl4 / Ar as etching gases. The results show that the etching depth of both etching gases is linear with the etching time. At 2 mTorr pressure, the RF power is 50 W, the flow rate of SiCl4 is 3 sccm, and the etching rate is 100 when Ar is 9 sccm nm / min, and has nothing to do with the doping concentration of the material. The experiment also shows that when SiCl4 / Ar is used as an etching gas, the Ar flow rate has no obvious effect on the etching rate in a wide range. However, the greater the Ar flow rate, the better the etching uniformity; Etching rate is also 100 nm / min, but the Ar flow rate has an effect on the etching rate: when the flow rate of Ar is less than 3 sccm, the etching rate decreases obviously with the decrease of Ar flow rate.