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Two kinds of short-period type II superlattices(SLs)InAs(6 monolayers(MLs))/GaSb(3 MLs)and InAs(8 MLs)/GaSb(8 MLs)which can serve for mid-infrared(MIR)detection have been grown by molecular beam epitaxy(MBE)on p-type GaSb(100)substrates.The cutoff wavelength for the two superlattices(SLs)was found to be around 4.8 lm at 300 K.The high resolution X-ray diffraction(HRXRD)measurements indicated that the InAs(8 MLs)/GaSb(8 MLs)SLs have better crystalline quality than that of the InAs(6 MLs)/GaSb(3 MLs)SLs.However,compared with infrared absorption in the 2.5–4.3 lm range,the optical absorption of InAs(6 MLs)/GaSb(3MLs)SLs was more excellent.This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.
Two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs)) / GaSb (3MLs) and InAs (8MLs) / GaSb (8MLs) which can serve for mid-infrared was grown by molecular beam epitaxy (MBE) on p-type GaSb (100) substrates. The cutoff wavelength for the two superlattices (SLs) was found to be around 4.8 lm at 300 K. The high resolution X-ray diffraction (HRXRD) measurements indicated that the InAs (8MLs) / GaSb (8MLs) SLs have better crystalline quality than that of the InAs (6MLs) / GaSb (3MLs) SLs.However, compared with infrared absorption in the 2.5-4.3 lm range , the optical absorption of InAs (6 MLs) / GaSb (3MLs) SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.