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采用含有过量硫的（ＮＨ４）２Ｓｘ对ＩｎＰ（１００）表面进行化学钝化和辉光放电电子束辐照处理，液氮下光致发光强度比未辐照的光致发光强度提高了１．５倍，比未钝化的提高了５倍．利用Ｘ射线光电子谱研究了电子辐照对ＩｎＰ表面硫钝化的影响．结果表明，硫钝化ＩｎＰ表面经电子束辐照可以促使Ｓ与ＩｎＰ中的Ｉｎ更好的化合．
The chemical inactivation and glow discharge electron beam irradiation on the InP (100) surface with (NH4) 2Sx with excess sulfur increased the photoluminescence intensity under liquid nitrogen by 1.5 Times, five times more than unpassivated. The effect of electron irradiation on the sulfur passivation of InP surface was studied by X-ray photoelectron spectroscopy. The results show that sulfur passivated InP surface by electron beam irradiation can promote better chemical combination of In with In.