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采用C2H2和N2作为反应气体、多晶Si作为靶材,利用射频磁控溅射系统沉积了SiCN薄膜。利用傅里叶红外光谱仪、X射线衍射仪、四探针测试仪等研究了C2H2流量对薄膜结构、介电常数以及阻挡性能的影响。结果表明,薄膜为非晶结构,1000℃退火下未出现结晶,稳定性很好;随着C2H2流量的增大,薄膜表面颗粒呈现增大趋势;C原子取代Si原子占据薄膜中的网络位置,薄膜形成了以C-N键为主的网络结构;制得的SiCN薄膜介电常数在4.2~5.8之间,C,N含量以及薄膜结构是影响介电性能的关键因素,高温使得Cu穿过薄膜中的缺陷与Si发生互扩散是薄膜阻挡性能失效的主要原因。
Using C2H2 and N2 as reactive gases, polycrystalline Si as a target, the use of RF magnetron sputtering system deposited SiCN film. The effects of C2H2 flux on the structure, dielectric constant and barrier properties of the films were investigated by Fourier transform infrared spectroscopy, X-ray diffraction and four-probe test. The results show that the film has an amorphous structure and no crystal appears at 1000 ℃. The stability of the film is good. With the increase of C2H2 flow rate, the particles on the surface of the film show an increasing tendency. The C atoms take the place of Si atoms in the network, The network structure is mainly composed of CN bonds. The dielectric constant of SiCN films is between 4.2 and 5.8. The content of C and N and the structure of the films are the key factors affecting the dielectric properties. The high temperature causes Cu to pass through the films Of defects and Si interdiffusion is the main reason for failure of the film barrier performance.