前言 由于集成电路技术的发展,使256K位超大规模集成电路存储器的研制工作获得了成功,但器件微细化、高集成化目前正由于其中心技术——曝光技术和腐蚀技术等进一步发展而发展着。 在上述情况下,作为该工艺所用的基本材料——硅单晶或硅片,是在假定它是完美无缺的情况下而言的。但如果损坏了它们的完美性,那么就 Preface Due to the development of integrated circuit technology, 256K-bit VLSI memory has been successfully developed. However, the miniaturization and highly integrated devices are currently being developed due to the further development of their central technologies, such as exposure technology and corrosion technology . In the above case, as a basic material for the process, a silicon single crystal or a silicon wafer, it is assumed that it is perfect. But if they damage their perfection, then