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本设计在膜层镀制过程中膜厚控制简单方便,基本上可用传统的光电极值法进行膜厚控制。第一层ZrO_2的厚度约为λ/8,是非λ/4层;第二层MgF_2,稍微超过λ/4极值点;第三层ZrO_2和第四层MgF_2都是在极值点停止蒸发。采用双光路带微分装置的光电膜厚仪。
The design of the film in the process of film thickness control is simple and convenient, basically the traditional optoelectronic value method for film thickness control. The first layer of ZrO 2 has a thickness of λ / 8, which is not λ / 4; the second layer of MgF 2 slightly exceeds the λ / 4 peak; the third layer of ZrO 2 and the fourth layer of MgF 2 stop evaporation at the extreme point. Photoelectric thickness gauge with dual optical path with differential device.