The work described herein represents an efficient method in the deposition of poly(3-methylthiophene),P3MeTh,thin films utilizing a microwave plasma system in combination with a simultaneous doping with iodine.It was envisaged that,an alternative poly(3-methylthiophene),P(3MeTh),with an electron donating methyl substituent,would reduce the degree of ring opening which reportedly occur to a certain extent during the plasma polymerization process of its parent compound polythiophene.An alkyl substituent would also increase the solubility of the materials.P(3MeTh)thin film deposition has been performed utilizing microwave-induced plasma polymerization in order to directly grow films on glass substrates.Moreover,simultaneous doping of the so-formed polymer with iodine has been carried out as opposed to the post-synthesis doping method.This is aimed to prolong electrical conducting lifetime of the materials.The synthesized films were characterized by attenuated total reflection fourier transform infrared(ATR FT-IR)spectroscopy and energy dispersive X-ray spectroscopy(EDS)to confirm the incorporation of iodine dopant into the films.Scanning electron microscopy showed uniformly deposited films.It has been observed that the electrical conductivity of the doped film is 2 orders of magnitude higher than the undoped counterpart.The doped fabricated films exhibited UV-vis spectra indicative of increased π-conjugation(536 nm).Furthermore,electrical conductivity of the in situ doped P(3MeTh)is more highly sustained over a longer period of time. The work described herein represents an efficient method in the deposition of poly (3-methylthiophene), P3MeTh, thin films utilizing a microwave plasma system in combination with a simultaneous doping with iodine. It was envisaged that, an alternative poly (3-methylthiophene) , P (3MeTh), with an electron donating methyl substituent, would reduce the degree of ring opening which reportedly occur to a certain extent during the plasma polymerization process of its parent compound polythiophene. Ann alkyl substituent would also increase the solubility of the materials. P (3MeTh) thin film deposition has been taken utilizing microwave-induced plasma polymerization in order to directly grow films on glass substrates. Moreover, simultaneous doping of so-formed polymer with iodine has been carried out as opposed to the post-synthesis doping method.This is aimed to prolong electrical conducting lifetime of the materials sform infrared (ATR FT-IR) spectroscopy and energy dispersive X-ray spectroscopy (EDS) to confirm the incorporation of iodine dopant into the films. Scanning electron microscopy showed uniformly deposited films. It has been observed that the electrical conductivity of the doped film is 2 orders of magnitude higher than the undoped counterpart. The doped fabricated films exhibit UV-vis spectra indicative of increased π-conjugation (536 nm). Thermal Recipients, electrical conductivity of the in situ doped P (3MeTh) is more highly sustained over a longer period of time.