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Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1 As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2° off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100℃ and the threshold current increased slowly with the increase of temperature.
Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs / AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1 As (69.5 nm) /4.5-pair [GaAs (10 nm) -AlAs (1.9 nm)] DBR was grown on an n + GaAs substrate (100) 2 ° off toward <111> A by molecular beam epitaxy. 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA / cm2. The maximum output power was more than 1 mW. The VCSEL device temperature increased from 20 to 100 ° C and the threshold current increased slowly with the increase of temperature.