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本文介绍了在低温下,对GaAs MESFET(包括12GHz低噪声器件、双栅器件、功率器件及振荡用器件)所进行的性能测量与分析。在218K(-55℃)下,上述各类器件的跨导g_m相对于室温可增加5~8%,器件的C_(gs)可减少20~50%,器件的寄生电阻R_s和R_d可减少15~40%,R_g也存在缓慢下降的趋势。 文章还给出了低温下低噪声GaAs MESFET放大器的噪声、增益—温度曲线。在218K下,放大器的噪声相对室温可下降1dB左右,单级增益相对室温可增加1~1.5dB,即在低温表现出良好的微波性能。
This article describes the performance measurement and analysis of GaAs MESFETs (including 12GHz low noise devices, dual-gate devices, power devices, and oscillating devices) at low temperatures. At 218K (-55 ℃), the transconductance g_m of all the above devices can be increased by 5 ~ 8% with respect to room temperature, the C_ (gs) of the device can be reduced by 20 ~ 50%, and the parasitic resistances R_s and R_d of the devices can be reduced by 15 ~ 40%, R_g there is a slow decline in the trend. The article also gives the noise and gain-temperature curves of a low-noise GaAs MESFET amplifier at low temperature. Under 218K, the amplifier’s noise can be reduced by about 1dB relative to room temperature, and the single-stage gain can be increased by 1 ~ 1.5dB relative to room temperature, which shows good microwave performance at low temperature.