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用水平三温区炉生长掺铬、氧、碲的砷化镓,在纯氢气流中,经780℃和800℃热处理一小时,制得了保持热稳定的半绝缘砷化镓单晶。在未掺氧的晶体中,达到半绝缘砷化镓的最低铬浓度是3.60×10~(15)厘米~(-3)。热稳定材料中的铬浓度在3.6×10~(16)厘米~(-3)以上,硅含量低于分析灵敏度(0.2ppm)。材料的热稳定性用方块电阻(欧姆/□)和漏电流进行检验。
Semi-insulating gallium arsenide (GaAs) single crystals were fabricated by thermal growth at 780 ℃ and 800 ℃ for one hour in a pure hydrogen gas stream with a horizontal three-temperature furnace for gallium arsenide doped with chromium, oxygen and tellurium. In the undoped crystals, the minimum chromium concentration to achieve semi-insulating gallium arsenide is 3.60 × 10 ~ (15) cm ~ (-3). The thermal stability of chromium in the material is above 3.6 × 10 ~ (16) cm -3, the silicon content is lower than the analytical sensitivity (0.2ppm). The thermal stability of the material is tested with the sheet resistance (ohms / square) and the leakage current.