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氮化铝薄膜耐高温、化学性质稳定、绝缘性能好,是优良的压电材料。氮化铝薄膜机电耦合系数大、声速高、高频性能好,适合于制柞声表面波器件。SAW器件与半导体技术的结合是当前发展的一个重要趋势,AlN的高频和低色散性能有助于解决大数据速率的信号处理器件。 本文概述近期氮化铝薄膜的新发展,薄膜的制作技术、结晶学性质、压电性和声学性能,AlN和ZnO压电薄膜的初步比较、AlN薄膜的应用,特别是AlN薄膜在声表面波技术发展中的动向等。
Aluminum nitride film high temperature, chemical stability, good insulation properties, is an excellent piezoelectric material. Aluminum nitride film electromechanical coupling coefficient, high speed, high frequency performance, suitable for making oak surface acoustic wave devices. The combination of SAW devices and semiconductor technologies is an important trend that is currently under development. The high frequency and low dispersion performance of AlNs contribute to signal processing devices that address large data rates. This article provides an overview of the recent developments of AlN films, their fabrication techniques, crystallographic properties, piezoelectric and acoustic properties, preliminary comparison of AlN and ZnO piezoelectric films, the application of AlN films, especially AlN films for surface acoustic wave Trends in technology development and so on.