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基于GaAs场效应晶体管(FET)微波脉冲固态功率放大器的输出脉冲包络,对输出脉冲波形的顶部降落与顶部过冲开展研究。从脉冲调制电路、GaAs FET的饱和深度以及沟道温度三个方面对脉冲顶降进行了讨论,指出了可以通过选用合适的储能电容、使GaAs FET工作在饱和状态、降低沟道温度来改善脉冲顶降。另外,从脉冲调制方式和寄生电感影响两方面分析了脉冲顶部过冲,给出了改善脉冲顶部过冲的措施,如减小电路中的寄生电感和选取合适的静态工作点。经实践验证,并通过脉冲顶降和顶部过冲在改善前后的数据对比,证明了上述措施是有效的。
Based on the output pulse envelope of GaAs field effect transistor (FET) microwave pulse solid state power amplifier, the top landing and top overshoot of output pulse waveform are studied. The pulse top-down is discussed in terms of the pulse modulation circuit, the saturation depth of the GaAs FET and the channel temperature. It is pointed out that the GaAs FET can be operated in a saturated state and the channel temperature can be reduced by selecting an appropriate storage capacitor Pulse top down. In addition, the pulse top overshoot is analyzed from the aspects of pulse modulation and parasitic inductance. The measures to improve the pulse top overshoot are given, such as reducing the parasitic inductance in the circuit and selecting the suitable static operating point. Proved by practice, and through the pulse top and top overshoot before and after improvement in data comparison, the above measures proved effective.