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介绍了一款基于0.4μm Bi CMOS工艺应用于温度补偿晶体振荡器的高性能温度传感器的设计。该温度传感器利用基极-发射极电压(VBE)减去与绝对温度成正比(PTAT)电流在电阻上的压降的原理,产生了与温度成线性的输出电压。采用包含两个串联发射结电压和低失调运算放大器的PTAT电流产生器,实现了高精度的PTAT电流;采用具有负温度系数的电阻,补偿了VBE的高阶温度特性;采用共源共栅结构,提高了输出电压的电源抑制。后仿真结果表明,当电源电压为3.3 V,温度范围为-40~85℃时,温度传感器的输出电压范围为0.964~1.490V,输出电压的斜率范围为-4.245×10-3~-4.160×10-3,斜率变化范围为8.5×10-5,表明该温度传感器具有非常高的线性度。
A design of high performance temperature sensor based on 0.4μm Bi CMOS process for temperature compensated crystal oscillator is introduced. The temperature sensor uses the principle of base-emitter voltage (VBE) minus the voltage drop across the resistor proportional to the absolute temperature (PTAT) current, producing a linear output voltage with temperature. High-precision PTAT current is achieved with a PTAT current generator that includes two series-connected transmit junction voltage and low offset op amps, high-temperature characteristics of VBE are compensated by resistors with negative temperature coefficients, cascode configuration , Which increases the power supply rejection of the output voltage. The simulation results show that when the supply voltage is 3.3 V and the temperature range is from -40 to 85 ℃, the output voltage range of the temperature sensor is 0.964 ~ 1.490V and the slope of the output voltage is -4.245 × 10-3 ~ -4.160 × 10-3, with a slope variation of 8.5 × 10-5, indicating that the temperature sensor has a very high linearity.