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由于电子束理论上可聚成直径小于 1nm的束斑 ,易于控制 ,在超大规模集成电路掩模制造中起的重要作用 ,目前仍无法用其他方法所代替 .以SDS 3电子束设备的电子枪为基础 ,讨论了双曲凹面加速器维纳尔 (外敷碱土金属氧化物盖 )的电子轨迹与能量分布 .通过这一维纳尔电子被送达硅片靶心 (置于光阑前 ) .最后给出了刻蚀硅片的束斑和加速器维纳尔的图 .
Since the electron beam can be theoretically synthesized into beam spots with a diameter less than 1 nm and is easy to control, it still can not be replaced by other methods because of its important role in the fabrication of VLSI masks. With the electron gun of the SDS 3 electron beam apparatus as Based on the discussion of the electron trajectory and energy distribution of the double-curvature concave accelerator Wenel (overlying alkaline-earth metal oxide cap), the Wiener electron is delivered to the wafer bulls-eye (placed in front of the aperture) Etched silicon wafer beam spot and accelerator Wiener plot.