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采用电桥及X射线衍射线形分析法研究磁控溅射Cu／Ni多层膜（CLI及Ni单层厚度均为5nm）的室温电阻率及平均位错密度随对层（bilayer）层数的变化规律．结果表明，随层数增加，电阻率及平均位错密度减少；多层膜电阻率大于单层膜电阻率；单层膜电阻率大于同质块状体的电阻率．并对其微观机制进行分析．
The resistivity and average dislocation density at room temperature of magnetron sputtered Cu / Ni multilayered films (CLI and Ni monolayer with thickness of 5nm) were studied by using bridge and X-ray diffraction analysis. The law of change. The results show that the resistivity and average dislocation density decrease with the increase of the number of layers; the resistivity of the multi-layer film is larger than that of the single-layer film; the resistivity of the single-layer film is larger than the resistivity of the homogeneous block. And its micro-mechanism analysis.