论文部分内容阅读
利用ＸＲＤ和ＳＥＭ观察了在不同衬底材料上用Ｓｏ１－Ｇｅｌ法制备的ＰＺＴ铁电陶瓷薄膜的显微结构。发现ＰＺＴ薄膜的结晶性能受衬底材料的影响极大。ＰＺＴ薄膜在金属铂片上能够很好地结晶，而在单晶硅片上则很难结晶，其在镀铂硅片上的结晶难易程度介于金属铂片与单晶硅片之间。在衬底上制备ＰＴ过渡层可以促进ＰＺＴ薄膜的结晶。
The microstructure of PZT ferroelectric ceramic films prepared by So1-Gel method on different substrate materials was observed by XRD and SEM. The crystalline properties of PZT films were found to be greatly affected by the substrate material. PZT thin films can crystallize well on the metal plate of platinum, while it is hard to crystallize on the surface of the single crystal silicon plate. The difficulty of crystallization on the platinum plate is between the metal plate and the monocrystalline plate. Preparation of PT transition layer on the substrate can promote the crystallization of PZT thin film.