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本文描述了npn GaAs/GaAlAs异质结双极晶体管的制作和高频性能。制作过程利用了分子束外延,并特别作了具有500(?)厚度的基极层。测量晶体管的截止频率f_t为11GHz(该值受与健合点及健合引线相联系的寄生元件限制)。
This article describes the fabrication and high frequency performance of npn GaAs / GaAlAs heterojunction bipolar transistors. The fabrication process utilized molecular beam epitaxy and specifically made a base layer with 500 (?) Thickness. The cut-off frequency f_t of the measuring transistor is 11 GHz (this value is limited by the parasitic elements associated with the jog point and the lead).